CLEANING METHOD OF CHAMBER FOR DEPOSITING AL-CONTAINING METALNITRIDE FILM

摘要

PURPOSE: A method for cleaning a chamber in which the deposition process of an aluminum-containing metal nitride layer is performed is provided to effectively clean a TiAlN layer which is formed on the inner wall of the chamber by performing the two step of a cleaning process with different cleaning gases. CONSTITUTION: A substrate is loaded to the inside of a chamber. An aluminum containing metal nitride layer is formed on the substrate. The substrate on which the aluminum containing metal nitride layer is formed is unloaded to the outside of the chamber(st3). A first step of a cleaning process is performed in the chamber with a first cleaning gas(st200). A second step of the cleaning process is performed in the chamber with a second cleaning gas(st300).