METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a loss of a metal wire due to oxidation by forming a protective layer on the surface of a contact hole. CONSTITUTION: An insulation layer(110) is formed on a semiconductor substrate(100) with a conductive pattern. A contact hole(H) is formed by etching the insulation layer to expose a conductive pattern. A protective layer(160) is formed on the surface of the contact hole. The semiconductor substrate with the protective layer is cleaned.