FORMING METHOD OF SILICON OXIDE FILM AND MANUFACTURING METHOD OF NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To form a silicon oxide film acting as a low-temperature and superior insulating film. Ž<P>SOLUTION: Trenches 1a and 1b are formed on a silicon substrate 1, and a coating film is formed by applying a coating agent wherein polymer including silazane bond is solved in an organic solvent. A polymer film is formed by vaporizing the organic solvent contained in the coating film. The polymer film is irradiated with ultraviolet rays at the temperature of 90°C or below, and the polymer film is soaked in purified water or water solution of the temperature of not lower than 50°C and lower than 80°C, to convert into a silicon oxide film 3. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž