MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY ARRAY

摘要

PROBLEM TO BE SOLVED: To solve a problem in an inclined evaporation type nanogap switch element in the prior art: the switching electric characteristics change in an ambient in the element and finally the switching characteristics are not exhibited in the element having this structure because variations are caused in electric characteristics of a large number of two electrodes due to site dependency on a wafer and dependency per wafer which appear on a distance between the two electrodes. SOLUTION: A first conductive region 135 is provided on a first hole 158 provided in a first film 150, a second conductive region 235 having a gap g between itself and the first conductive region 135 is provided on the upper part of the first hole 158, and a memory element is configured of the first conductive region 135, the second conductive region 235 and the gap g. COPYRIGHT: (C)2010,JPO&INPIT