| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which reduces on-state resistance of an element by suppressing backward leakage current in a silicon carbide power semiconductor device having a diode with p-i-n and Schottky junctions. <P>SOLUTION: The method of manufacturing the semiconductor device includes the steps of: carrying out ion-implantation of p-type impurity in part of a region of a surface of a n-type epitaxial silicon carbide semiconductor layer disposed on the n-type silicon carbide semiconductor substrate so as to form a p-type impurity region; depositing a first metal layer for forming a Schottky barrier between n-type epitaxial silicon carbide semiconductor layeres, on the surface of the n-type epitaxial silicon carbide semiconductor layer; depositing a second metal layer for containing aluminum on the first metal layer; and annealing the second metal layer after the same is deposited. The annealing process allows the aluminum contained in the second metal layer to be selectively diffused to the p-type impurity region. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
