SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device wherein breakage of a gate insulating film is suppressed. SOLUTION: The semiconductor device has a contact hole 13 in a position overlapping a gate electrode 8 covering a surface of a silicon pillar 5 for power supply to the gate electrode, and the contact hole 13 has: a gate lift polysilicon 14 filled from a bottom of the contact hole 13 beyond at least a top surface of the gate electrode 8; and a gate contact 15 disposed on the gate lift polysilicon 14. COPYRIGHT: (C)2010,JPO&INPIT