发明名称 HIGH SENSITIVE INFRARED DETECTOR FOR NDIR TYPE GAS SENSOR USING WAFER LEVEL PACKAGING AND ITS MANUFACTURING METHOD
摘要 PURPOSE: A high sensitive infrared detector for an NDIR-type gas sensor using a wafer level packaging and a method for manufacturing the same are provided to reduce manufacturing cost and time using the junction of a wafer. CONSTITUTION: An upper substrate(121) includes a first cavity and an infrared filter and is bonded on the upper side of a lower substrate. A getter is formed in the upper substrate. A metal solder layer bonds the upper substrate and the lower substrate. At least one second cavity is formed on the upper side of the lower substrate. A sensor(113) and a support unit(115) are formed on the second cavity. The sensor senses infrared rays. The support unit supports the both side of the sensor.
申请公布号 KR20100036853(A) 申请公布日期 2010.04.08
申请号 KR20080096256 申请日期 2008.09.30
申请人 U ELECTRONICS CO., LTD. 发明人 HAN, YONG HEE;KIM, KUN TAE;KIM, HYUNG WON;KIM, HEE SUNG
分类号 H01L29/84 主分类号 H01L29/84
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