发明名称 |
HIGH SENSITIVE INFRARED DETECTOR FOR NDIR TYPE GAS SENSOR USING WAFER LEVEL PACKAGING AND ITS MANUFACTURING METHOD |
摘要 |
PURPOSE: A high sensitive infrared detector for an NDIR-type gas sensor using a wafer level packaging and a method for manufacturing the same are provided to reduce manufacturing cost and time using the junction of a wafer. CONSTITUTION: An upper substrate(121) includes a first cavity and an infrared filter and is bonded on the upper side of a lower substrate. A getter is formed in the upper substrate. A metal solder layer bonds the upper substrate and the lower substrate. At least one second cavity is formed on the upper side of the lower substrate. A sensor(113) and a support unit(115) are formed on the second cavity. The sensor senses infrared rays. The support unit supports the both side of the sensor.
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申请公布号 |
KR20100036853(A) |
申请公布日期 |
2010.04.08 |
申请号 |
KR20080096256 |
申请日期 |
2008.09.30 |
申请人 |
U ELECTRONICS CO., LTD. |
发明人 |
HAN, YONG HEE;KIM, KUN TAE;KIM, HYUNG WON;KIM, HEE SUNG |
分类号 |
H01L29/84 |
主分类号 |
H01L29/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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