METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to compensate loss of an element isolation film created during an etching process by forming an oxide layer by forming a silicon layer on the element isolation film and oxidizing the silicon layer. CONSTITUTION: An element isolation film(110) defining an active area is formed within a semiconductor substrate(100). A groove(H) is formed by etching the semiconductor substrate including the element isolation film. The semiconductor substrate having the groove is cleaned. The silicon film is formed on the active area and the element isolation film of the cleaned semiconductor substrate. The silicon film is oxidized and the gate insulating layer is formed on the active area. An oxide film(130) compensating the loss occurred during the cleaning is formed on the surface of the element isolation film.