| 摘要 |
[PROBLEMS] To provide a protection method for semiconductor wafer reoxidation prevention suitable for a micronized semiconductor device; and a method for maintaining a wafer treated by dry etching without reoxidation up to the step of forming an electrode material film and for properly removing a dry etching reaction product. [MEANS FOR SOLVING PROBLEMS] A wafer with a dry etching reaction product remaining on its surface is protected with the reaction product. The wafer is brought into contact with an inert gas having a temperature of 100°C or below and a pressure of not less than 50 Pa and not more than the atmospheric pressure, or air equivalent to air in a clean room or a mixed gas composed of the air and an inert gas to protect the wafer. Alternatively, a method may be adopted in which, immediately before the electrode material film formation, the reaction product is decomposed and removed by heating.
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