| 摘要 |
PURPOSE: A method of manufacturing III-nitride semiconductor light emitting device is provided to enhance external quantum efficiency of an emitting device by including a rough surface which scatters light generated from an active layer. CONSTITUTION: A material layer(20) which forms gallide is formed by reacting with the Ga of a group III nitride semiconductor layer(10). A gallide(30) is formed between the group III nitride semiconductor layer and a material layer. A rough surface(11) which scatters the light generated in an active layer of the group III nitride semiconductor layer is formed. An electrode(40) is formed on the rough surface. The group III nitride semiconductor layer is doped to p-type.
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