| 摘要 |
Problems in reliability and cross-talk of MRAM, which are intrinsically ascribable to the structure thereof, are solved at the same time. In a magnetic storage device ( 1 ) having write word lines ( 11 ) and bit lines ( 12 ) formed so as to cross while keeping a predetermined space therebetween, and provided with a TMR element ( 13 ) configured so as to sandwich a tunnel insulating layer ( 303 ) with a magnetization fixed layer ( 302 ) and a storage layer ( 304 ) comprising a ferromagnetic layer, in each of thus-formed intersectional region, and there is provided a semiconductor region ( 22 ) in which two read transistors ( 24, 24 ), which serve as read transistors, are formed, and which comprises a first region ( 22 a) obliquely crosses a projected region of the write word line ( 11 ); a second region ( 22 b) formed in parallel with the bit line ( 12 ) so as to be continued from one end of the first region; and a third region ( 22 c) formed in parallel with the bit line ( 12 ) and so as to be continued from the other end of the first region ( 22 a). |
