发明名称 Voltage generator circuit capable of generating different voltages based on operating mode of non-volatile semiconductor memory device
摘要 High voltage generator circuits and methods for operating non-volatile semiconductor memory devices are provided for use with non-volatile memory such as FLASH memory devices, to selectively generate different types of control voltages for various operating modes of non-volatile memory devices.
申请公布号 US7692977(B2) 申请公布日期 2010.04.06
申请号 US20070837207 申请日期 2007.08.10
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 KIM JIN-KOOK;LEE JIN-YUB
分类号 G11C5/14 主分类号 G11C5/14
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