发明名称 |
Voltage generator circuit capable of generating different voltages based on operating mode of non-volatile semiconductor memory device |
摘要 |
High voltage generator circuits and methods for operating non-volatile semiconductor memory devices are provided for use with non-volatile memory such as FLASH memory devices, to selectively generate different types of control voltages for various operating modes of non-volatile memory devices.
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申请公布号 |
US7692977(B2) |
申请公布日期 |
2010.04.06 |
申请号 |
US20070837207 |
申请日期 |
2007.08.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
KIM JIN-KOOK;LEE JIN-YUB |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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