发明名称 Process for making an organic field effect transistor
摘要 The present invention relates to a process for reducing the mobility of an semiconductor (OSC) layer in an electronic device, which has a semiconducting channel area, in specific areas outside said channel area by applying an oxidzing agent to the OSC layer.
申请公布号 US7691665(B2) 申请公布日期 2010.04.06
申请号 US20050666751 申请日期 2005.10.04
申请人 MERCK PATENT GMBH 发明人 BROWN BEVERLEY ANNE;VERES JANOS;OGIER SIMON DOMINIC
分类号 H01L51/40;H01L51/00;H01L51/05 主分类号 H01L51/40
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