发明名称 Light emitting device and method of manufacturing the same
摘要 To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.
申请公布号 US7692186(B2) 申请公布日期 2010.04.06
申请号 US20070623618 申请日期 2007.01.16
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;HIROKI MASAAKI;MURAKAMI MASAKAZU;KUWABARA HIDEAKI
分类号 H01L29/08;H01L27/32;H01L51/52 主分类号 H01L29/08
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