发明名称 Semiconductor device and method for manufacturing the same
摘要 In a pad forming region electrically connecting an element forming region to the outside, in which a low dielectric constant insulating film is formed in association with in the element forming region, a Cu film serving as a via formed in the low dielectric constant insulating film in the pad forming region is disposed in higher density than that of a Cu film serving as a via in the element forming region. Hereby, when an internal stress occurs, the stress is prevented from disproportionately concentrating on the via, and deterioration of a function of a wiring caused thereby can be avoided.
申请公布号 US7692315(B2) 申请公布日期 2010.04.06
申请号 US20050055652 申请日期 2005.02.11
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 WATANABE KENICHI;IKEDA MASANOBU;KIMURA TAKAHIRO
分类号 H01L23/52;H01L23/48;H01L23/485;H01L23/532;H01L29/40;H01L31/119 主分类号 H01L23/52
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