| 发明名称 |
Method for manufacturing semiconductor device |
| 摘要 |
An insulating film is formed as a pore-wall protective film (103) on pore walls in a porous layer (102) by the use of a mixed gas plasma of a noble gas and an insulating film forming gas generated by microwave excitation. As a result, the pore-wall protective film can have film properties as a protective film.
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| 申请公布号 |
US7691725(B2) |
申请公布日期 |
2010.04.06 |
| 申请号 |
US20050544491 |
申请日期 |
2005.08.04 |
| 申请人 |
OHMI TADAHIRO;TERAMOTO AKINOBU |
发明人 |
OHMI TADAHIRO;TERAMOTO AKINOBU |
| 分类号 |
H01L21/30;H01L27/12;H01L21/02;H01L21/762 |
主分类号 |
H01L21/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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