| 摘要 |
A semiconductor device includes: a semiconductor substrate; an IGBT cell; and a diode cell. The substrate includes a first layer on a first surface, second and third layers adjacently arranged on a second surface of the substrate and a fourth layer between the first layer and the second and third layers. The first layer provides a drift layer of the IGBT cell and the diode cell. The second layer provides a collector layer of the IGBT cell. The third layer provides one electrode connection layer of the diode cell. A resistivity &rgr;1 and a thickness L1 of the first layer, a resistivity &rgr;2 and a thickness L2 of the fourth layer, and a half of a minimum width W2 of the second layer on a substrate plane have a relationship of (&rgr;1/&rgr;2)×(L1·L2/W22)<1.6.
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