GALLIUM NITRIDE EPITAXIAL WAFER, AND METHOD OF MANUFACTURING EPITAXIAL WAFER

摘要

PURPOSE: A gallium nitride-based epitaxial wafer and a method for manufacturing an epitaxial wafer are provided to minimize the distribution of a light emission wavelength of an active layer by forming a well layer on a nitride-based substrate. CONSTITUTION: A gallium nitride-based substrate having a major face is prepared. A gallium nitride-based semiconductor film(43) is formed on the major face of the gallium nitride-based substrate. An active layer(45) is formed on a gallium nitride-based semiconductor film and has a quantum well structure(47). An active layer comprises a well layer(47a) consisting of the gallium-nitride group semiconductor including indium as III group element.