发明名称 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, PROGRAM AND COMPUTER READABLE STORAGE MEDIUM
摘要 <P>PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method capable of achieving proper deposition of a molecular layer by sufficiently reducing the mixture of material gases and improving throughput. Ž<P>SOLUTION: The film deposition apparatus 10 includes: plural first plate members 23b arranged within a hermetically-sealable cylindrical chamber 21, wherein the plural first plate members 23b each having an opening are arranged in a first direction along a center axis of the chamber with a first clearance therebetween; and plural second plate members 24b arranged in the first direction with the first clearance therebetween, the plural second plate members 24b being reciprocally movable through the openings of the plural first plate members 23b. A first pair of first plate members 23b among the plural first plate members 23b provides a first passage for a first gas flowing in a second direction toward an inner circumferential surface of the chamber. A second pair of first plate members 23b among the plural first plate members 23b provides a second passage for a second gas flowing in the second direction. A pair of second plate members 24b among the plural second plate members 24b supports a wafer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010073822(A) 申请公布日期 2010.04.02
申请号 JP20080238438 申请日期 2008.09.17
申请人 TOKYO ELECTRON LTD 发明人 KATO HISASHI;TAKEUCHI YASUSHI
分类号 H01L21/31;C23C16/455;C23C16/458;H01L21/316;H01L21/318 主分类号 H01L21/31
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