| 摘要 |
PROBLEM TO BE SOLVED: To surely insulate a sample wherein a leakage failure has occurred before wafer burn-in without contaminating a plating tub or a plating liquid with a coating resin, in a semiconductor device subjected to wafer burn-in before a plating process and in a method for manufacturing the semiconductor device, which executes wafer burn-in before the plating process. SOLUTION: The semiconductor device has the internal circuit 17 of a semiconductor chip 11 and an electrode pad 22 for wafer burn-in (electrode pad) provided on the semiconductor chip 11. The electrode pad 22 for the wafer burn-in is electrically connected through a metal fuse (fuse part) 31 to the internal circuit 17. Thus, when the metal fuse 31 is blown out, the electrode pad 22 for wafer burn-in and the internal circuit 17 are electrically insulated. COPYRIGHT: (C)2010,JPO&INPIT
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