发明名称 SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY DEVICE MOUNTING THE SENSE AMPLIFIER MOUNTED THEREON
摘要 <P>PROBLEM TO BE SOLVED: To effectively reduce sense amplifier offset by a small additional circuit area and a small control signal. <P>SOLUTION: The sense amplifier (1) includes a differential amplifier circuit (2) for generating an amplifier signal according to a difference between a first input signal voltage (BT) and a second input signal voltage (BB), an output circuit (3) connected to the differential amplifier circuit (2) to receive the amplifier signal, and a load (4) connected to the differential amplifier circuit (2). The differential amplifier circuit (2) preferably includes a first output node (N1) for supplying the amplifier signal to the output circuit, and a second output node (N2) disposed in a positional symmetrical to the first output node (N1) and connected to the load (4). The output circuit (3) preferably includes an output end for outputting an output signal generated based on the amplifier signal. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010073249(A) 申请公布日期 2010.04.02
申请号 JP20080238842 申请日期 2008.09.18
申请人 NEC ELECTRONICS CORP 发明人 SENO TAKASHI
分类号 G11C11/4091 主分类号 G11C11/4091
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