发明名称 METHOD FOR FORMING THIN FILM AND THIN-FILM FORMING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a thin-film forming device and a method for forming a thin film, not needing a complicated device such as a vacuum device, and capable of forming a thin film with a uniform quality. <P>SOLUTION: The thin-film forming device forms a thin film on a base material by generating plasma at atmospheric pressure or near at atmospheric pressure. The device has a discharge-gas supply means for supplying a discharge gas, a raw material gas supply means for supplying a raw material gas, one pair of electrodes, a high-frequency power source for generating a high-frequency electric field in between the one pair of electrodes, and a control means which simultaneously performs supply starting of the discharge gas by the discharge gas supply means, supply starting of the raw material gas by the raw material gas supply means, and impression starting of high frequency voltage to an electrode by the high-frequency power source. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010069406(A) 申请公布日期 2010.04.02
申请号 JP20080239111 申请日期 2008.09.18
申请人 KONICA MINOLTA HOLDINGS INC 发明人 YAMASHITA HIROSHI;KUDO KAZUYOSHI
分类号 B01J19/08;C23C16/455;C23C16/509;H05H1/24 主分类号 B01J19/08
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