发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a NAND type flash memory that reduces current consumption. Ž<P>SOLUTION: This is a method of controlling a NAND type flash memory provided with a latch circuit temporarily holding data. First current consumption of the latch circuit is measured in a first state in which first logic is held in the latch circuit. Second current consumption of the latch circuit is measured in a second state in which second logic obtained by inverting the first logic is held in the latch circuit. The first current consumption is compared with the second current consumption. The logic corresponding to a state in which the current value is smaller is held in the latch circuit. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010073245(A) 申请公布日期 2010.04.02
申请号 JP20080238092 申请日期 2008.09.17
申请人 TOSHIBA CORP 发明人 FURUTA YUKA;WATANABE YOSHIHISA
分类号 G11C16/06;G11C16/04 主分类号 G11C16/06
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