| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing it which suppress the roll-off effect of flat-band voltage of the MOS type semiconductor device using a high dielectric constant film and a metal gate electrode, and control a threshold voltage into an appropriate range. Ž<P>SOLUTION: The semiconductor device includes a gate insulation film 2 formed on a silicon substrate 1, and a metal gate electrode 3 formed in the gate insulation film 2. The gate insulation film 2 includes a first insulation film 2a, a second insulation film 2b which is formed on the first insulation film 2a and has a greater dielectric constant than the first insulation film 2a, and a third insulation film 2c formed on the second insulation film 2b. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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