| 摘要 |
一种在制造积体电路元件中形成分闸式快闪记忆体元件的新方法。此方法至少包括提供一基材。沉积一层膜覆盖基材。这层膜至少包括一第二介电层覆盖一第一介电层，且在两者之间有一电子陷入层。沉积一罩幕层覆盖此膜。图案化罩幕层与此层膜，以暴露出基材之一部份，形成至少包括电子陷入层之一悬浮闸极电极。成长一氧化层覆盖基材裸露的部分。移除罩幕层。沉积一导体层覆盖氧化层与第二介电层。图案化导体层与氧化层，以完成至少包括导体层之一控制闸极电极。此控制闸极电极具有一第一部份覆盖悬浮闸极电极以及一第二部分未覆盖悬浮闸极电极。A new method to form a split gate for a flash device in the manufacture of an integrated circuit device is achieved. The method comprises providing a substrate. A film is deposited overlying the substrate. The film comprises a second dielectric layer overlying a first dielectric layer with an electronic-trapping layer therebetween. A masking layer is deposited overlying the film. The masking layer and the film are patterned to expose a part of the substrate and to form a floating gate electrode comprising the electronic-trapping layer. An oxide layer is grown overlying the exposed part of the substrate. The masking layer is removed. A conductive layer is deposited overlying the oxide layer and the second dielectric layer. The conductive layer and the oxide layer are patterned to complete a control gate electrode comprising the conductive layer. The control gate electrode has a first part overlying the floating gate electrode and a second part not overlying the floating gate electrode. |
