| 摘要 |
<p>An adapted semiconductor light emitting device and method for manufacturing the same are disclosed. The semiconductor light emitting device includes a luminescent layer and a super paramagnetic layer. The luminescent layer can emit the first light. Especially, part or major part of the first light is adapted to emit the second light when the first light passes through the super paramagnetic layer. In some embodiments, the semiconductor light emitting device is designed for blending the unadapted part of the first light with the second light to emit the third light, e.g. white light.</p> |
