发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, the method including: forming a first film on a target film; forming resist patterns on the first film; processing the first film with the resist patterns to form first patterns including: periodic patterns; and aperiodic patterns; removing the resist patterns; forming a second film over the target film; processing the second film to form second side wall patterns on side walls of the first patterns; removing the periodic patterns; and processing the target film with the aperiodic patterns and the second side wall patterns, thereby forming target patterns including: periodic target patterns; aperiodic target patterns; and dummy patterns arranged between the periodic target patterns and the aperiodic patterns and arranged periodically with the periodic target patterns.
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申请公布号 |
US2010081265(A1) |
申请公布日期 |
2010.04.01 |
申请号 |
US20090557111 |
申请日期 |
2009.09.10 |
申请人 |
MASHITA HIROMITSU;KOTANI TOSHIYA;MUKAI HIDEFUMI;NAKAJIMA FUMIHARU;KODAMA CHIKAAKI |
发明人 |
MASHITA HIROMITSU;KOTANI TOSHIYA;MUKAI HIDEFUMI;NAKAJIMA FUMIHARU;KODAMA CHIKAAKI |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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