发明名称 |
GATE DRIVE METHOD FOR H BRIDGE CIRCUIT |
摘要 |
An H bridge circuit includes a gate driver circuit coupled to a gate of an NMOS device. The output of the gate driver circuit is at a voltage from 0.1V to 0.4V during a dead time of the H bridge circuit. The gate voltage of the NMOS device is biased at 0.1˜0.4V to overcome the problems of minority carrier injection and power dissipation as compared with VG=0 in a conventional H bridge circuit.
|
申请公布号 |
US2010079194(A1) |
申请公布日期 |
2010.04.01 |
申请号 |
US20090554995 |
申请日期 |
2009.09.08 |
申请人 |
FREESCALE SEMICONDUCTOR, INC |
发明人 |
ZHENG IVEN;LI WALEY;WEI LINPENG;ZHAO HONGWEI;LI WEIYING |
分类号 |
H03K17/687 |
主分类号 |
H03K17/687 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|