| 摘要 |
Provided is a method for producing a Group III nitride semiconductor light-emitting device including a GaN substrate serving as a growth substrate, which method realizes processing of the GaN substrate to have a membrane structure at high reproducibility. In the production method, a stopper layer of AlGaN having an Al compositional proportion of 20% is formed on the top surface of a GaN substrate; an n-type layer, an active layer, a p-type layer, and a p-electrode are sequentially formed on the stopper layer; and the p-electrode is joined to a support substrate. Subsequently, a mask having a center-opening pattern is formed on the bottom surface of the GaN substrate, and the bottom surface is subjected to PEC etching. The bottom surface is irradiated with light having a wavelength corresponding to an energy higher than the band gap of GaN, but lower than the band gap of AlGaN having an Al compositional proportion of 20%. Since etching stops when it proceeds to a depth reaching the stopper layer, a membrane structure can be formed at high reproducibility.
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