REDUCING SPIN PUMPING INDUCED DAMPING OF A FREE LAYER OF A MEMORY DEVICE

摘要

A system and method of reducing spin pumping induced damping of a free layer (110) of a memory device (100) is disclosed. The memory device includes an anti-ferromagnetic material (AFM) pinning layer (104) in contact with a bit line access electrode (102). The memory device also includes a pinned layer (106) in contact with the AFM pinning layer, a tunnel barrier layer (108) in contact with the pinned layer, and a free layer (110) in contact with the tunnel barrier layer. The memory device includes a spin torque enhancing layer (112) in contact with the free layer and in contact with an access transistor electrode. The spin torque enhancing layer is configured to substantially reduce spin pumping induced damping of the free layer.