SILICON WAFER AND METHOD FOR MANUFACTURING SAME

摘要

Provided is a silicon wafer which is mirror-finished and is subjected to a semiconductor device manufacturing process having a scanning laser irradiation heat treatment step to be performed under the conditions of a maximum temperature of 1100°C or higher but not higher than the melting point of silicon and a processing time within the range of approximately 1 µsec to 10 msec.  A scratch of 10 µm or more which causes a silicon wafer crack in the scanning laser irradiation heat treatment step is eliminated within a range wherein the ratio between the distance, which the scratch advances from the silicon wafer end surface and the outermost circumferential section on the silicon wafer rear surface to the wafer center in the diameter direction, and a wafer diameter dimension is 0-3/300.