| 摘要 |
A semiconductor device comprises a semiconductor substrate having a first semiconductor region of a first semiconductor type, a second semiconductor region of a second conductivity type extended in the first semiconductor region, and a mesa area forming a slope along an outer circumference of the semiconductor substrate; a first electrode provided on a first principal surface of the semiconductor substrate; and a second electrode provided on a second principal surface of the semiconductor substrate that is opposed to the first principal surface; wherein the second semiconductor region comprises a main region provided in the semiconductor substrate while being brought into contact with the first electrode, the main region including an annular portion and diffused portions arranged in a spread manner in an area surrounded by the annular portion; and wherein a portion of the first semiconductor region is interposed between the diffused portions and between the diffused portions and the annular portion; and the diffused portions are composed of a small pitch region and a large pitch region having a larger pitch than that of the small pitch region.
|
