| 摘要 |
<p>PURPOSE: An LDMOS(Lateral Diffused Metal Oxide Semiconductor) transistor and a manufacturing method thereof are provided to improve the RDSon property of a transistor by forming a surface current flow path, except for a current flow path, around the bottom of STI(Shallow Trench Isolation). CONSTITUTION: An LDMOS transistor comprises an N well, an epi layer, a body region(207), a drift region(209), and a field insulating layer. A first channel area is formed and bypasses a body region to the bottom of the field insulating layer. A second channel region is formed in the epi layer between the body region and the drift layer. A gate electrode(219) is formed on the first and second channel regions.</p> |
