| 摘要 |
A high frequency/high output semiconductor device, which is excellent in heat resistance and by which an uneven operation is suppressed, is provided. A semiconductor device, include a semiconductor substrate, a plurality of unit cells connected in parallel with each other, each of the unit cells include a plurality of electric field effect transistors formed on the semiconductor substrate, a plurality of gate bus wiring each configured to connect each of the gate electrodes of the transistors constituting the unit cell, a plurality of gate pad electrodes having multi-layered structure of conductive layers, each of the gate pad electrodes connected to the gate bus wiring, and a resistive element configured to connect the adjacent gate pad electrodes having formed along at least one side of outer peripheral portion of the gate pad electrode, and formed of at least one conductive layer of the conductive layers constituting the gate pad electrode.
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