发明名称 FILM FORMATION DEVICE AND SUBSTRATE PROCESSING APPARATUS
摘要 <p>A film formation device includes a substrate transfer mechanism, a first reactive gas supply unit, a second reactive gas supply unit, and a separation gas supply unit.  The substrate transfer mechanism is provided in a vacuum vessel and includes a circling transfer path in which a plurality of substrate mounting units are circlingly transferred in a row.  The circling transfer path includes a linear transfer path in which the plurality of substrate mounting units are linearly transferred.  The first reactive gas supply unit is arranged along the transfer direction in which the substrate mounting units are transferred in the linear transfer path and has such a configuration as to supply a first reactive gas to the plurality of substrate mounting units transferred in the linear transfer path.  The second reactive gas supply unit is arranged alternately with the first reactive gas supply unit along the transfer direction and has such a configuration as to supply a second reactive gas to the plurality of substrate mounting units transferred in the linear transfer path.  The separation gas supply unit is provided between the first reactive gas supply unit and the second reactive gas supply unit and has such a configuration as to supply a separation gas.</p>
申请公布号 WO2010035773(A1) 申请公布日期 2010.04.01
申请号 WO2009JP66607 申请日期 2009.09.25
申请人 TOKYO ELECTRON LIMITED;TSUJI, NORIHIKO;MOROI, MASAYUKI;YANAGITANI, KENICHI;HANADA, YOSHIYUKI 发明人 TSUJI, NORIHIKO;MOROI, MASAYUKI;YANAGITANI, KENICHI;HANADA, YOSHIYUKI
分类号 C23C16/54;C23C16/455;H01L21/285;H01L21/31 主分类号 C23C16/54
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