| 摘要 |
PURPOSE: A resin and a chemically amplified resist composition comprising the same are provided to obtain resist patterns with excellent sensitivity and resolution, especially to be suitable for KrF excimer laser lithography, EUV lithography, X-ray lithography, and electron-beam lithography. CONSTITUTION: A resin comprises a structure unit represented by chemical formula (I). In chemical formula (I), Q^1 and Q^2 are independently fluorine atom or C1-C6 perfluoroalkyl group, U is a C1-C20 divalent hydrocarbon group in which at least one -CH2- can be replaced with -O-, -NH-, -S-, -NR^c-, -CO- or -CO-O-; R^c is C1-C6 alkyl group; X^1 is O-CO-, -CO-O-, -CO-OCH2-, -CH2-O-CO-, -O-CH2-, -CH2-O-, NR^d-CO- or -CO-NR^d-; R^d is hydrogen atom or C1-C6 alkyl group; and A^+ is an organic counter ion. |
