NON-VOLATILE MEMORY DEVICE AND PAGE BUFFER CIRCUIT

摘要

PURPOSE: A non-volatile memory device and a page buffer thereof are provided to program memory cells while targeting two at the same time by including a page buffer block controlling a bit line of a plurality of memory cells. CONSTITUTION: A cell array(110) comprises a plurality of memory cells. A page buffer block(140) controls bit lines of a plurality of memory cells. A control logic omits a verification process for memory cells programmed to a first target state when memory cells is determined to a program pass. The control logic(170) executes a verification process for memory cells programmed to a second target state when memory cells is determined to a program pass. A page buffer block comprises a plurality of page buffers.