| 摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor device and a flash memory device using the same are provided to reduce over erase of a flash memory device by forming a structure combining a memory cell and a select transistor. CONSTITUTION: A nitride layer(202) is formed on a semiconductor substrate(100). A sacrifice vertical structure(SVS) is formed on the nitride film. A sacrificial spacer is formed on a side of the sacrifice vertical structure. The nitride film is first patterned using the sacrifice vertical structure and the sacrificial spacer as a mask. The sacrificial spacer is removed. Gate electrodes(310, 320) are formed on the side of the sacrifice vertical structure.</p> |
