| 摘要 |
PURPOSE: A thin film transistor substrate and manufacturing method thereof are provided to improve the efficiency of a thin film transistor by forming an organic semiconductor after forming a pixel electrode. CONSTITUTION: A thin film transistor substrate comprises a gate line, a gate insulating layer(140), a frame built-up layer(400), a semiconductor(154), a data line, a drain electrode(175), a protective film(180), and a pixel electrode(191). The gate line includes a gate electrode(124) formed on the substrate. The gate insulating layer is formed on the gate electrode. The frame built-up layer is formed on the gate insulating layer while including an opening(40) overlapping with the gate electrode. The semiconductor fills the opening. The data line includes a source electrode(173) which contacts the semiconductor.
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