| 摘要 |
This organic field effect transistor comprises a semiconductor layer made of an organic semiconductor material. The mobility μsup of the charge carriers in the first portion of the semiconductor layer is X times greater than the mobility μinf of the charge carriers in the second portion of the semiconductor layer, with the first portion corresponding to 10% of the volume of the semiconductor layer closest to the gate electrode and the second portion corresponding to 10% of the volume of the semiconductor layer closest to the drain and source electrodes. |
