| 发明名称 |
Integrated circuit having memory having a step-like programming characteristic |
| 摘要 |
A memory cell includes a first electrode, a second electrode, and phase-change material between the first electrode and the second electrode. The phase-change material has a step-like programming characteristic.
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| 申请公布号 |
US7688618(B2) |
申请公布日期 |
2010.03.30 |
| 申请号 |
US20060488869 |
申请日期 |
2006.07.18 |
| 申请人 |
QIMONDA NORTH AMERICA CORP. |
发明人 |
HAPP THOMAS;PHILIPP JAN BORIS |
| 分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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