NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A non-volatile memory device and a manufacturing method thereof comprise a first conductive layer within a first electrode and semiconductor layer. The electric resistance increase caused by the length increase of the first electrode can be controlled. CONSTITUTION: A semiconductor layer(114) having the first conductivity type on substrate is formed. One or more first electrodes(110) comprises the first conductive layer(112) having the resistivity lower than the semiconductor layer. The second semiconductor layer(140) has the opposite of the first conductivity type second conductive type. One or more second electrodes(150) includes the second semiconductor layer. And it is arranged in order to be crossed toward one or more first electrode. A data storing layer(130) is in the crossing potion of the second semiconductor layer and semiconductor layer an interpose.