METHOD OF PRODUCTION OF HIGH PURITY CRYSTAL SILICON (VERSIONS)

摘要

FIELD: metallurgy. ^ SUBSTANCE: process is carried out in two stages in reactor of plasma furnace at temperature above 1500C. Quartz grit as a silicon containing compound is introduced into the reactor at the first stage of reduction, while mixture of carbon monoxide with hydrogen taken at volume ratio 1:1 is introduced as a reducer. According to one version of the invention an anode is connected to a current conducting case of the reactor and to melted silicon, further quartz grit is added into the reactor; and mixture of methane, propane or acetylene with oxygen taken at volume ratio 2:1 is introduced into the reactor as a reducer. The process can be performed with alternate current of frequency above 5 kHZ. ^ EFFECT: production of high purity silicon by ecologically safe method with low losses and low prime cost. ^ 3 cl, 3 ex