| 摘要 |
PURPOSE: A method for forming a metal wiring of a semiconductor device is provided to prevent a metal lift due to out-gas by performing a thermal process. CONSTITUTION: A lower metal wiring(20) is formed on an interlayer dielectric(10). A first interlayer dielectric(31) is deposited on the semiconductor substrate. The first interlayer dielectric is deposited on the semiconductor substrate. A second interlayer dielectric(32) is deposited. The surface of the second interlayer dielectric is planarized. A buffer oxide(60) is deposited. A via contact hole is patterned through a photo lithography process. A tungsten plug is formed through a chemical mechanical polishing process or etch back process. The metal layer is deposited. The upper metal wiring is patterned. A thermal process is preformed.
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