| 摘要 |
PURPOSE: A thin film transistor and a manufacturing method thereof control the length of the oxygen blockade layer of a protective film. The protection of the channel layer and recover of the TFT property are realized at the same time. CONSTITUTION: A pair of electrodes(15, 16) is met on a channel layer(13). The surface exposing of the channel layer is covered with a protective film. The protective film comprises the oxygen permeable membrane and oxygen blockade layer. The oxygen permeable membrane is touched with the channel layer. The first direction is the confronting direction of a pair of electrodes. Backward is the direction to the first direction. It is similar of the value of 0.55 times of the width(W1) of a pair of electrodes of backward or the length(L) of the oxygen blockade layer to the first direction bigger than that. |
