| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device allowing the on-off characteristics of a cell transistor and the resistance to stress of writing and erasing to be compatible. Ž<P>SOLUTION: In a nonvolatile semiconductor memory device, a stacked body is provided on a silicon substrate by alternately stacking pluralities of isolation dielectric films 14 and electrode films WL, a through-hole 17 is formed in the stacked body to extend in the stacking direction, a memory film 24 is formed by stacking a block layer 25, a charge layer 26 and a tunnel layer 27 in this order at an inner face of the through-hole 17, and thereby a silicon pillar SP is buried in the through-hole 17. At this time, the electrode film WL is protruded further than the isolation dielectric film 14 toward the silicon pillar SP at the inner face of the through-hole 17, and an end face of the isolation dielectric film 14 has a curved shape displacing toward the silicon pillar SP side as the electrode film WL is approached. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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