| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an IGBT diode integrated device having low on-voltage of IGBT and high reverse recovery characteristics of a diode. Ž<P>SOLUTION: A semiconductor device 10 includes: a semiconductor substrate 12 in which a vertical IGBT 20 and a vertical diode 40 are formed. A body region 24 of the IGBT 20 is formed up to a position deeper than an anode region 42 of the diode 40. Over both an area in which the IGBT 20 is formed, and an area in which the diode 40 is formed, a crystal defect in the semiconductor substrate 12 is formed shallower than a lower limit of the body region 24 of the IGBT 20, and is distributed in higher concentration than that of the circumference in the range deeper than a lower limit of the anode region 42 of the diode 40. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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