| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which the width size of spaces can equally be formed when forming a line-and-space pattern by a sidewall transfer process. Ž<P>SOLUTION: The method for manufacturing the semiconductor device includes: a process for laminating a first insulating film 10, a second insulating film 12 and a third insulating film 13 on the surface of a ground layer 20; a process for anisotropically etching the insulating films 12, 13 by using the resist of the line-and-space pattern as a mask and removing the resist; a process for slimming the insulating films 12, 13 and processing the cross-sectional shape of a line like a T-shape; a process for forming a film 17 different from the insulating films 12, 13 on these processed insulating films 12, 13; a process for anisotropically etching the different film 17 until the upper surfaces of the second insulating film 13 and the first insulating film 10 are exposed; and a process for etching the first insulating film 10 after removing the insulating films 12, 13. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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