| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of reducing a dark current caused by an interface state without preparing a hole accumulation layer made of an impurity diffusion layer, and thereby capable of arranging a sensor on a shallow position of a semiconductor substrate and improving charge transfer efficiency. SOLUTION: The solid-state imaging apparatus 1A includes a diode (sensor) D made of an impurity diffusion layer formed on a surface layer of a semiconductor substrate 101 and an oxide insulating film 9A formed on the diode D and containing carbon. The oxide insulating film 9A is formed with a metal oxide. COPYRIGHT: (C)2010,JPO&INPIT |
