| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing liquid enabling the coexistence of a high polishing speed and low erosion when polishing a body to be polished (a wafer), and a chemical mechanical polishing method using the chemical mechanical polishing liquid. <P>SOLUTION: The chemical mechanical polishing liquid includes glycine, triazoles, abrasive grains, an oxidant and a mixture of an alkyl diphenyl ether disulfonic acid and an alkyl diphenyl ether monosulfonic acid and/or a mixture of these salts. The chemical mechanical polishing method includes a process supplying a polishing pad on a polishing surface plate with the chemical mechanical polishing liquid, and a process polishing a surface to be polished containing the metal of a body to be polished by relatively moving the polishing pad and the surface to be polished while making the polishing pad contact with the surface to be polished by the rotation of the polishing surface plate. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
